Published February 2023 | Version v1
Journal article

Planar MN4 (M = Zn, Cd) monolayers. 2D anisotropic Dirac semimetals of ultrahigh Fermi velocities

  • 1. School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021 (China)
  • 2. Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, 341000 (China)
  • 3. CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials, Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201 (China)

Description

After the exfoliation of graphene, it is appealing to seek more 2D Dirac materials with unique structures, rich physics, and intriguing properties. Herein, by means of density functional theory (DFT) computations, two planar 2D Dirac transition-metal nitrides are reported, namely, MN4 (M = Zn, Cd) monolayers. The basal planes of these monolayers can be regarded as tiled by hexagons and pentagons, with tetracoordinated metal and tricoordinated nitrogen as vertices. Besides the demonstrated mechanical, dynamic, and thermal stabilities, the two MN4 monolayers both exhibit an anisotropic Dirac cone at the Fermi level, thus featuring anisotropic Dirac fermions. Particularly, these Dirac fermions present ultrahigh Fermi velocities, which are in the same order of magnitude as that of graphene (106 m s1). Moreover, the Dirac cone is robust against external strains and electric fields due to the protection of σv(x) and C2z symmetry. Above all, the remarkable electronic properties suggest that MN4 (M = Zn, Cd) monolayers have potential applications as nanoelectronic devices. (© 2022 Wiley‐VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.202200326

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. Rapid Research Letters (Online)
Journal Volume
17
Journal Issue
2
Journal Page Range
p. 1-7
ISSN
1862-6270
CODEN
PSSRCS

Optional Information

Notes
AID: 2200326