The simulation of enhances diffusion of high-temperature - implanted aluminium in aluminum in silicon carbide

The theoretical model for description of profiles evolution of aluminium additions at high-temperature ion implantation in silicon carbide is proposed. The model consists of a diffusion equation for the Al addition and also kinetic equations for formation of new bonds: the broken bond - addition. Generation of the Si and C broken bonds by irradiation and the possibility of the Al yield from the film during the irradiation are taken into account. The calculation showed, that the Al yield from the film equals above 40%. The modeling results are in agreement with the experimental data