Published May 26, 2003
| Version v1
Journal article
Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
Creators
- 1. Institute of Quantum Electronics and Photonics, Ecole Polytecnic Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)
- 2. Consiglio Nazionale delle Ricerche, Istituto IMM-CNR, via Arnesano, 73100 Lecce (Italy)
- 3. National Nanotechnology Laboratory, INFM-Unita di Lecce c/o Dipartimento di Ingegneria dell'Innovazione, Universita di Lecce, Via Arnesano, 73100 Lecce (Italy)
Description
We have studied the radiative and structural properties of identical InxGa(1-x)As quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent spectroscopy, efficient lasing from the ground state is achieved only in the MBE sample, whereas excited state lasing is obtained in the MOCVD device. Such a difference is ascribed to the existence of the internal dipole field in the MOCVD structure, induced by the strong faceting of the dots, as observed by high-resolution transmission electron microscopy
Additional details
Identifiers
- DOI
- 10.1063/1.1578182;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 21
- Journal Page Range
- p. 3632-3634
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037708
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DIPOLES; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; MULTIPOLES; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; SURFACE COATING
Optional Information
- Notes
- (c) 2003 American Institute of Physics.