Published April 25, 2011
| Version v1
Journal article
Comment on 'Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment' [Appl. Phys. Lett. 97, 203508 (2010)]
Creators
- 1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.3584000;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 98
- Journal Issue
- 17
- Journal Page Range
- p. 176101-176101.1
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42109059
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- NITROGEN IONS; OXIDES; PLASMA; PLASMA PRODUCTION; PROCESSING; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS; TRANSISTORS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; IONS; MATERIALS; NANOSTRUCTURES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- (c) 2011 American Institute of Physics