Published August 15, 2001 | Version v1
Journal article

Optical phonons of hexagonal

Description

The behavior of longitudinal and transverse optical phonons in hexagonal AlxGa1-xN is derived theoretically and experimentally as a function of the concentration x(0≤x≤1). The theoretical approach is based on a modified random element isodisplacement model which considers the interactions with the nearest neighbor and second neighbor atoms. We find 'one-mode' behavior in AlxGa1-xN in which the phonon frequency in general varies continuously and approximately linearly with x. The theoretical simulations are in good agreement with Raman scattering experiments, which also reveal that both the linewidth and intensity of the optical phonons strongly depend on the concentration. copyright 2001 American Institute of Physics

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
90
Journal Issue
4
Series
The American Physical Society
Journal Page Range
p. 1761-1767
ISSN
0021-8979

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
32046203
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM NITRIDES; CONCENTRATION RATIO; GALLIUM NITRIDES; PHONONS; RAMAN SPECTRA; SCATTERING
Descriptors DEC
ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; QUASI PARTICLES; SPECTRA

Optional Information

Notes
Othernumber: JAPIAU000090000004001761000001; 020116JAP
Funding organization
United States (United States)