Published August 15, 2001
| Version v1
Journal article
Optical phonons of hexagonal
Creators
Description
The behavior of longitudinal and transverse optical phonons in hexagonal AlxGa1-xN is derived theoretically and experimentally as a function of the concentration x(0≤x≤1). The theoretical approach is based on a modified random element isodisplacement model which considers the interactions with the nearest neighbor and second neighbor atoms. We find 'one-mode' behavior in AlxGa1-xN in which the phonon frequency in general varies continuously and approximately linearly with x. The theoretical simulations are in good agreement with Raman scattering experiments, which also reveal that both the linewidth and intensity of the optical phonons strongly depend on the concentration. copyright 2001 American Institute of Physics
Additional details
Identifiers
- DOI
- 10.1063/1.1384508;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 90
- Journal Issue
- 4
- Series
- The American Physical Society
- Journal Page Range
- p. 1761-1767
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32046203
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM NITRIDES; CONCENTRATION RATIO; GALLIUM NITRIDES; PHONONS; RAMAN SPECTRA; SCATTERING
- Descriptors DEC
- ALUMINIUM COMPOUNDS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; QUASI PARTICLES; SPECTRA
Optional Information
- Notes
- Othernumber: JAPIAU000090000004001761000001; 020116JAP
- Funding organization
- United States (United States)