Published 1998 | Version v1
Miscellaneous Metadata-only

Luminescence studies of InGaN/GaN MQW structures

Creators

  • 1. Department of Physics, UMIST, (United Kingdom)
  • 2. Tokushima University, Tokushima (Japan)
  • 3. Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham (United Kingdom)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 8

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064524
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; MEETINGS; NITRIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM MECHANICS; TIME RESOLUTION
Descriptors DEC
CHEMICAL COATING; DEPOSITION; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MECHANICS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; RESOLUTION; SURFACE COATING; TIMING PROPERTIES

Optional Information