Published 2002 | Version v1
Miscellaneous Metadata-only

Photoelectrical properties of Au/p-CdTe Schottky contacts

Creators

  • 1. Institute of Semiconductor Physics, NAS, Kiev (Ukraine)
  • 2. Physical and Technological Research and Sertification Center 'Microanalytics', Kiev (Ukraine)

Description

no abstract available

Part of:
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications

Additional details

Publishing Information

Imprint Title
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
Imprint Pagination
210 p.
Journal Page Range
p. 176

Conference

Title
International Conference on Solid State Crystals - Materials Science and Applications
Dates
14-18 Oct 2002
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075367
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CADMIUM TELLURIDES; CARRIER DENSITY; ELECTRIC CONTACTS; ETCHING; FERMI LEVEL; FOWLER-NORDHEIM THEORY; GOLD; HOLE MOBILITY; PHOTOCURRENTS; PHOTOELECTRIC EFFECT; PHOTOEMISSION; SCHOTTKY BARRIER DIODES
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTS; EMISSION; ENERGY LEVELS; EQUIPMENT; METALS; MOBILITY; SECONDARY EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE FINISHING; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
1 ref.