Published April 1, 2011
| Version v1
Journal article
Combined effects of bilayer structure and ion substitutions on bismuth ferrite thin films
- 1. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)
- 2. Department of Materials Science, Sichuan University, Chengdu 610064 (China)
Description
To understanding the combined effects of bilayer structure and ion substitutions on electrical behavior of BiFeO3 thin films, the Bi0.90La0.10Fe0.90Zn0.10O3/Bi0.90La0.10Fe0.90Sn0.10O3 bilayers with different thickness ratios were fabricated on SrRuO3/Pt/TiO2/SiO2/Si(100) substrates by radio frequency sputtering. Their dielectric constant increases and the fatigue endurance becomes better with increasing Bi0.90La0.10Fe0.90Zn0.10O3 thickness ratios. The bilayer with the thickness ratio of 210: 90 exhibits a high remanent polarization, and a better fatigue behavior is induced by higher driving electric fields and frequencies.
Additional details
Identifiers
- DOI
- 10.1063/1.3563573;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 109
- Journal Issue
- 7
- Journal Page Range
- p. 074101-074101.4
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43017236
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH COMPOUNDS; CERAMICS; ELECTRIC FIELDS; FERRITES; FERROELECTRIC MATERIALS; IONS; LANTHANUM COMPOUNDS; LAYERS; PERMITTIVITY; POLARIZATION; SILICON OXIDES; SPUTTERING; SUBSTRATES; THICKNESS; THIN FILMS; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIMENSIONS; ELECTRICAL PROPERTIES; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics