Interaction of electrons with optical phonons localized in a quantum well

The scattering rate of electrons in a quantum well by localized polar optical and interface phonons is considered. The dependence of the force of the electron-phonon interaction on the frequency of optical phonons in materials of the heterostructure forming the electron and phonon quantum wells is determined. It is shown that, by varying the composition of semiconductors forming the quantum well and its barriers, it is possible to vary the scattering rates of electrons by a factor of several times. The scattering rates of electrons by polar optical phonons are calculated depending on the fractions Inx and Iny in the composition of semiconductors forming the InxAl1-xAs/InyGa1-yAs quantum wells. Dependences of the mobility and saturated drift velocity of electrons in high electric fields and quantum wells InyGa1-yAs on the composition of the InxAl1-xAs barriers introduced into quantum wells are determined experimentally. The electron mobility increases, while the saturated drift velocity decreases as the fraction of Inx in the composition of barriers is increased.