Published December 31, 2003
| Version v1
Journal article
Transition metal impurities in 3C-SiC and 2H-SiC
Creators
Description
The electronic and structural properties of 3d transition metal (TM) impurities in 3C-SiC and 2H-SiC have been investigated by ab initio calculations. The stability, spin states, formation and transition energies of isolated Ti, V, and Cr impurities in several charge states were computed. Our results were compared to available experimental data
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.008;
- PII
- S0921452603006550;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 116-120
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36112814
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALCULATION METHODS; CARBON NITRIDES; CHARGE STATES; ELECTRONIC STRUCTURE; IMPURITIES; SILICON CARBIDES; SPIN; STABILITY; TRANSITION ELEMENTS
- Descriptors DEC
- ANGULAR MOMENTUM; CARBIDES; CARBON COMPOUNDS; ELEMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.