Published March 2010 | Version v1
Journal article

The Plateau de Bure ASTEP Platform Test in natural radiation environment of electronic components and circuits

  • 1. Universite et Centre National de la Recherche Scientifique, Institut Materiaux Microelectronique Nanosciences de Provence - IM2NP, UMR CNRS 6242, 13 - Aix-Marseille (France)
  • 2. Groupe Radiations, Recherche et Developpement Central, STMicroelectronics-Crolles, 42 - Saint Etienne (France)
  • 3. JB R et D, 42 - Saint Etienne en Devoluy (France)

Description

Reducing the size of microelectronic devices and increasing the integration density of circuits lead (following the famous Moore's law) to an increased sensitivity of circuits to natural terrestrial radiation environment. - Such sensitivity to atmospheric particles (mainly neutrons) can cause non-destructive (soft-errors) or destructive (latch-up) failures in most electronic circuits, including volatile static memories (SRAM), object of the research work carried out since 2004 on the European Test Platform ASTER. - This paper presents in details the ASTEP platform, its location, the instruments (neutron monitor of the Plateau de Bure) and the experiences (memory tester) currently installed on the Plateau de Bure. In a second part, we also report a synthesis of the key results concerning the natural radiation sensitivity of SRAM fabricated in 130 nm and 65 nm bulk silicon technologies. (authors)

Additional details

Additional titles

Original title (French)
La plateforme ASTEP du Plateau de Bure Tests en environnement radiatif naturel de composants et circuits electroniques

Publishing Information

Journal Title
REE. Revue de l'Electricite et de l'Electronique
Journal Issue
no.3
Journal Page Range
p. 39-50
ISSN
1265-6534
CODEN
REELF3

Optional Information

Notes
28 refs.