Damage accumulation in Al2O3 during H2+ or He+ ion irradiation
Creators
Description
The damage evolution in α-Al2O3 single crystals during He+ or H2+ ion irradiation was studied in an electron microscope. The irradiations were performed with 10 keV He+ions at a flux of 1x1013 ions/cm2 s and 15 keV H2+ ions at a flux of 1x1014 ions/cm2 s over the temperature range of room temperature to 1273 K. Dislocation loops and bubbles became larger in the specimens irradiated with hydrogen ions compared to those irradiated with helium ions. At higher temperature, bubbles were formed preferentially inside the planes of dislocation loops. This is observed at lower temperature under hydrogen ion irradiation than under helium ion irradiation. These differences may be caused by strong trapping of helium atoms at radiation-induced vacancies which retard the growth of loops or bubbles. In the case of hydrogen ion irradiation, enhanced point defect mobility due to hydrogen ions leads to the formation of large loops or bubbles
Additional details
Identifiers
- PII
- S0168583X98008106;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 148
- Journal Issue
- 1-4
- Journal Page Range
- p. 745-751
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 34024986
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; BUBBLES; BUILDUP; DISLOCATIONS; ELECTRON MICROSCOPES; HELIUM IONS; HYDROGEN IONS; IRRADIATION; RADIATION EFFECTS; TRAPPING; VACANCIES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; IONS; LINE DEFECTS; MICROSCOPES; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.