X-ray structural analysis of modified In P crystals by laser radiation

The structure of In P monocrystals modified by impulses of laser irradiation is researched in the article. In P monocrystals with electron's concentration 2·1017 cm-3 and directions of surface plane [111] were initial samples. The results of X-ray structural analysis showed that reflections of polycrystal conditions and extraction of metal element have not been detected on the modified In P diffract gammas as distinct from Ga As. The dislocation density in the it is less than in modified Ga As. All of these factors are related with that In P is declined to the dissociation even in melted condition by contrast to Ga As which formatted strong dissociated melting. The In P subsurface layer meltdown under laser action does not lead to considerably content deviation from stoichiometry. 4 refs., 1 fig