Scattering of electrons in n-Si crystals irradiated with protons by nanoscale inclusions

Thus, a drastic increase in the value of μ_eff is observed in the n-Si crystals after irradiation with 25 MeV protons (μ_eff is the effective mobility of the majority charge carriers). This effect is direct proof that ''metallic'' inclusions are predominantly formed in the samples under study as a result of irradiation. It appears that ''metallic'' inclusions are agglomerations of interstitial atoms or associations thereof. Presumable, in the cource of annealing (at T_ann=90 ℃) and natural aging of irradiated samples for 30 days at 300 K, negative charged impurity-defect shells, which are impenetrable for electrons, are formed around ''metallic'' inclusions; this result in a drastic decrease in the effective value of electron mobility μ_eff. Apparently preferential formation of ''dielectric'' or ''metallic'' inclusions depends on the energy and type of particles incident on the crystal. (author)