Carrier dynamics in site-controlled Ga1-xInxN quantum dots

Site-controlled nanostructures were fabricated by deposition of GaInN on top of hexagonal GaN pyramids by selective metal organic vapor-phase epitaxy. This allows us to control exactly the position of the emitting quantum dots, which is an essential requirement for functionalized single-photon emitters. The nature of the growth process implies also the formation of quantum wells on the side-walls of the pyramid and quantum wires at the edges, next to the quantum dot on the apex. The emission properties of these structures were investigated using low-temperature time-resolved spectroscopy. These measurements showed regions of different confinement with emission in the green spectral wavelength range. The analysis of the decay times confirms that the luminescence originates from regions with different dimensionality. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)