Published December 2005
| Version v1
Journal article
Defect passivation in strain engineered InAs/(InGa)As quantum dots
Creators
- 1. INFM-Physics Department, University of Roma 'La Sapienza', P.le A. Moro 2, I-00185 Rome (Italy)
- 2. CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma (Italy)
Description
A series of InAs quantum dots (QDs) embedded in In xGa1-xAs confining layers with different In composition and thickness have been investigated by photoluminescence. An enhancement of the PL signal up to 25 times was obtained via hydrogen irradiation. It has been shown that two different non radiative channels account for the temperature dependence of the PL spectra in both as-grown and hydrogenated samples. In the latter samples, only a partial passivation of both type of defects, whose nature is discussed, has been achieved
Additional details
Identifiers
- DOI
- 10.1016/j.msec.2005.06.025;
- PII
- S0928-4931(05)00137-2;
Publishing Information
- Journal Title
- Materials Science and Engineering. C, Biomimetic Materials, Sensors and Systems
- Journal Volume
- 25
- Journal Issue
- 5-8
- Journal Page Range
- p. 830-834
- ISSN
- 0928-4931
Conference
- Title
- Current trends in nanoscience
- Acronym
- European Materials Research Society 2004 - Symposium G
- Dates
- 24-28 May 2004
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38004472
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- HYDROGEN; INDIUM ARSENIDES; IRRADIATION; LAYERS; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM DOTS; STRAINS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; NONMETALS; PHOTON EMISSION; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.