Published June 1999
| Version v1
Journal article
Spectra current noise of photoresistors on the basis of Hg3 In2 Te6
- 1. Zaporyiz'ka Derzhavna Yinzhenerna Akademyiya, Zaporyizhzhya (Ukraine)
- 2. Chernovitskij Gosudarstvennyj Univ., Chernovtsy (Ukraine)
Description
The spectral power density of current noise Si of photoresistors Hg3 In2 Te6 is studied within the frequency range f = 10 / 104 Hz up to L = 3 centre dot 1017 photon/(cm2 centre dot s) of the incident phonon flux. It is revealed that excess current noise was of 1/f-type under the dark condition. Illumination by integral light leads to the transformation of the 1/f noise into the generation-recombination (GR) one
Additional details
Additional titles
- Original title (Ukrainian)
- Spektri strumovogo shumu fotoprovyidnika Hg
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal
- Journal Volume
- 44
- Journal Issue
- 6
- Journal Page Range
- p. 748-751
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 31007008
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; ELECTRIC CURRENTS; INDIUM TELLURIDES; MERCURY TELLURIDES; PHOTORESISTORS; RADIATION EFFECTS
- Descriptors DEC
- CHALCOGENIDES; CURRENTS; ELECTRICAL EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; MERCURY COMPOUNDS; MOBILITY; RESISTORS; TELLURIDES; TELLURIUM COMPOUNDS