Published February 2003 | Version v1
Journal article

The U peak in the DLTS spectra of n-GaAs irradiated with fast neutrons and 65-MeV protons

  • 1. Kuznetsov Siberian Physicotechnical Institute, Tomsk, 634050 (Russian Federation)
  • 2. Tomsk Polytechnical University, Tomsk, 634034 (Russian Federation)

Description

The origin of a broad U band in spectra obtained using deep-level transient spectroscopy (DLTS) of n-GaAs irradiated with fast neutrons and 65-MeV protons was investigated. It is believed that this band is presumably a superposition of two peaks related to two defects P2 and P3 which have been well documented in GaAs and reside within defect clusters. The DLTS spectra were calculated taking into account the nonuniform distribution of these defects in a sample and the built-in electric fields induced by corresponding inhomogeneities

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
2
Journal Page Range
p. 140-144
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 151-155 (No. 2, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.