Published November 11, 2013
| Version v1
Journal article
Magnetoresistance and electron-hole exchange interaction in (Co1-xInx)2O3-v concentrated ferromagnetic semiconductors
Creators
- 1. School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
Description
Systematic studies of electrical transport properties of (Co1-xInx)2O3-v concentrated ferromagnetic semiconductors were performed. Quantitative analysis demonstrated that spin dependent variable range hopping dominated the low temperature transport behavior. Moreover, it was found that ferromagnetic or antiferromagnetic coupling of electron-hole pair generated during the variable range hopping process is responsible for the negative or positive magnetoresistance, respectively. Our results not only illustrate the connection between magnetoresistance and electron-hole exchange interaction but also provide a unique method to detect the exchange interaction of electron-hole pair
Additional details
Identifiers
- DOI
- 10.1063/1.4831689;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 20
- Journal Page Range
- p. 202411-202411.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45075251
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIFERROMAGNETISM; EXCHANGE INTERACTIONS; MAGNETORESISTANCE; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INTERACTIONS; MAGNETISM; PARTICLE PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC