Published May 20, 2008
| Version v1
Journal article
P-Type Conduction of ZnO Thin Film by Codoping Technique
- 1. Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang (Malaysia)
Description
Aluminium and zinc target were co-sputtered on silicon (111) substrates using DC magnetron sputtering in the pure argon atmosphere. These films were then underwent the thermal annealing in different ratios of nitrogen and oxygen for 1 hour to form thin oxide films. P-type conduction in ZnO thin films have been realized by the Al-N codoping method, whereby the lowest resistivity of 3.41x10-3 Ω·cm and the highest carrier concentration of 1.54x1022 cm-3 was achieved for sample prepared at annealed temperature of 300 deg. C
Additional details
Identifiers
- DOI
- 10.1063/1.2940615;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1017
- Journal Issue
- 1
- Journal Page Range
- p. 144-148
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- National physics conference 2007 on current issues of physics in Malaysia
- Acronym
- PERFIK 2007
- Dates
- 26-28 Dec 2007
- Place
- Kuala Terengganu (Malaysia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40023210
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ANNEALING; ARGON; CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; P-TYPE CONDUCTORS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; FLUIDS; GASES; HEAT TREATMENTS; MATERIALS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE GASES; SEMICONDUCTOR MATERIALS; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics