Published 1975 | Version v1
Report Metadata-only

Selfsupported epitaxial silicon films

Creators

Description

The paper describes the methods of removing the p or p+ support of an n-type epitaxial silicon layer, using electrochemical etching. So far only n+-n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling-blocking experiments

Availability note (English)

MF available from INIS under the Report Number.

Additional details

Publishing Information

Imprint Pagination
p. 12.
Report number
IFA-NR--57-1975

INIS

Country of Publication
Romania
Country of Input or Organization
Romania
INIS RN
7242597
Subject category
S22: GENERAL STUDIES OF NUCLEAR REACTORS;
Descriptors DEI
CHANNELING; CRYSTAL GROWTH; DISSOLUTION; EPITAXY; ETCHING; LAYERS; SEMICONDUCTOR JUNCTIONS; SILICON
Descriptors DEC
ELEMENTS; SEMIMETALS; SURFACE FINISHING