Published May 2014 | Version v1
Journal article Metadata-only

Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

Creators

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing (China)
  • 2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)
  • 3. Department of Mechatronic Technology, National Taiwan Normal University, Taipei (China)
  • 4. Department of Engineering and System Science, National Tsing Hua University, Hsinchu (China)

Description

We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 μA at 150 C, large off/on resistance window (>200) at 150 C, large rectification ratio of ∝300 at 150 C and good current distribution at 85 C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.201409039

Additional details

Identifiers

DOI
10.1002/pssr.201409039;

Publishing Information

Journal Title
Physica Status Solidi. Rapid Research Letters (Online)
Journal Volume
8
Journal Issue
5
Journal Page Range
p. 431-435
ISSN
1862-6270
CODEN
PSSRCS

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
45081697
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BINDING ENERGY; COMPOSITE MATERIALS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON SPECTRA; EMISSION SPECTRA; ENERGY SPECTRA; MEMORY DEVICES; PHOTOELECTRIC EMISSION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TITANIUM OXIDES; VACANCIES; YTTRIUM OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTRON EMISSION; EMISSION; ENERGY; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; POINT DEFECTS; SPECTRA; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS

Optional Information

Notes
With 4 figs., 1 tab., 30 refs.