Published June 20, 2005
| Version v1
Journal article
Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane
Creators
- Kang, B.S.1, 2, 3, 4
- Kim, J.1, 2, 3, 4
- Jang, S.1, 2, 3, 4
- Ren, F.1, 2, 3, 4
- Johnson, J.W.1, 2, 3, 4
- Therrien, R.J.1, 2, 3, 4
- Rajagopal, P.1, 2, 3, 4
- Roberts, J.C.1, 2, 3, 4
- Piner, E.L.1, 2, 3, 4
- Linthicum, K.J.1, 2, 3, 4
- Chu, S.N.G.1, 2, 3, 4
- Baik, K.1, 2, 3, 4
- Gila, B.P.1, 2, 3, 4
- Abernathy, C.R.1, 2, 3, 4
- Pearton, S.J.1, 2, 3, 4
- 1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- 2. Multiplex, Inc., South Plainfield, New Jersey 07080 (United States)
- 3. Nitronex Corporation, Raleigh, North Carolina 27606 (United States)
- 4. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Description
The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45x10-3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications
Additional details
Identifiers
- DOI
- 10.1063/1.1952568;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 86
- Journal Issue
- 25
- Journal Page Range
- p. 253502-253502.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017614
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CAPACITANCE; ELECTRON MOBILITY; GALLIUM NITRIDES; HYSTERESIS; MEMBRANES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2005 American Institute of Physics