Published May 15, 2014
| Version v1
Journal article
Spectral photoresponse of ZnSe/GaAs(001) heterostructures with CdSe ultra-thin quantum well insertions
- 1. Physics Department, Cinvestav-IPN, Av. IPN 2508, 07360 México, DF (Mexico)
Description
We present a study of the spectral photoresponse (SPR) of ZnSe/GaAs(001) heterostructures for different ZnSe film thickness with and without CdSe ultra-thin quantum well (UTQW) insertions. We observe a significant increase of the SPR of heterostructures containing 3 monolayer thick CdSe UTQW insertions; these results encourage their use in photodetectors and solar cells
Additional details
Identifiers
- DOI
- 10.1063/1.4878303;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1598
- Journal Issue
- 1
- Journal Page Range
- p. 171-174
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international conference on low dimensional structures and devices
- Acronym
- LDSD 2011
- Dates
- 22-27 May 2011
- Place
- Telchac (Mexico)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45101656
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM SELENIDES; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; INTERFACES; PHOTODETECTORS; QUANTUM WELLS; SOLAR CELLS; THICKNESS; THIN FILMS; ZINC SELENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; DIMENSIONS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; GALLIUM COMPOUNDS; NANOSTRUCTURES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC