Microstructure of epitaxial Al(111)Si(111) films studied by synchrotron grazing incidence x-ray diffraction

This paper reports the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed