Theoretical and experimental investigations of the thermoelectric properties of Bi2S3
Creators
- 1. IMRA Europe S.A.S., 220 rue Albert Caquot, BP 213, 06904 Sophia Antipolis (France)
- 2. Institute of Nano Science and Technology, Habitat Centre, Sector-64, Phase X, Mohali (India)
- 3. Department of Atomistic Modelling and Simulation, ICAMS, Ruhr-Universität Bochum, Bochum (Germany)
- 4. Institute of Materials Science, University of Stuttgart, Heisenbergstraße 3, Stuttgart (Germany)
- 5. Unité de Catalyse et Chimie du Solide, UMR CNRS 8181, Ecole Nationale Supérieure de Chimie de Lille, Bat C7a-BP 90108, 59652 Villeneuve d'Ascq (France)
Description
Electronic and transport properties of Bi2S3 with various dopants are studied using density functional theory and experimental characterizations. First, principle calculations of thermoelectric properties are used to evaluate the thermoelectric potential of the orthorhombic Bi2S3 structure. The computational screening of extrinsic defects is used to select the most favorable n-type dopants. Among all the dopants considered, hafnium and chlorine are identified as prospective dopants, whereas, e.g., germanium is found to be unfavorable. This is confirmed by experiment. Seebeck coefficient (S) and electrical conductivity (σ) measurements are performed at room temperature on pellets obtained by spark plasma sintering. An increase of power factors (S2·σ) from around 50 up to 500 μW K−2 m−1 is observed for differently doped compounds. In several series of samples, we observed an optimum of power factor above 500 μW K−2 m−1 at room temperature for a chlorine equivalence of 0.25 mol. % BiCl3. The obtained results are plotted on a semilogarithmic log (σ) versus S graph to demonstrate that a very strong linear trend that limits the power factor around 500 μW K−2 m−1 exists. Further improvement of Bi2S3 as thermoelectric material will require finding new doping modes that will break through the observed trend. The results of stability tests demonstrate that properties of optimally doped Bi2S3 are stable
Additional details
Identifiers
- DOI
- 10.1063/1.4916528;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 12
- Journal Page Range
- p. 125103-125103.10
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46105048
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH CHLORIDES; BISMUTH SULFIDES; CHLORINE; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM; GRAPH THEORY; HAFNIUM; ORTHORHOMBIC LATTICES; PHASE STABILITY; POWER FACTOR; SINTERING; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- BISMUTH COMPOUNDS; BISMUTH HALIDES; CALCULATION METHODS; CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELEMENTS; FABRICATION; HALIDES; HALOGEN COMPOUNDS; HALOGENS; MATERIALS; MATHEMATICS; METALS; NONMETALS; PHYSICAL PROPERTIES; REFRACTORY METALS; STABILITY; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENTS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC