Published 1999
| Version v1
Journal article
Electron states in size-quantized semiconductor wire with coating
Description
The electron states in a size-quantized semiconductor wire with a semiconductor coating having greater than the wire forbidden band width are considered assuming that confining potential on the coating external boundary is infinite (the staircase infinitely well model -SIW). The wave functions are found and the equation is obtained for defining energy eigenvalues. The binding energy of a hydrogenic impurity located on the wire axis is calculated using the variational approach. The behavior of energy levels and the binding energy of impurity in the GaAs-Ga1-xAlxAs SIW is investigated depending on the alloy concentration x and the effective-mass ratio. 17 refs
Additional details
Additional titles
- Original title (Russian)
- Состояние электрона в размерно-квантованной полупроводниковой проволоке с покрытием
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk Armyanskoj SSR. Seriya Fizika
- Journal Volume
- 34
- Journal Issue
- 1
- Journal Page Range
- p. 17-23
- ISSN
- 0002-3035
- CODEN
- IAAFA3
INIS
- Country of Publication
- Armenia
- Country of Input or Organization
- Armenia
- INIS RN
- 32066036
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONCENTRATION RATIO; ENERGY GAP; GALLIUM ARSENIDES; SCHROEDINGER EQUATION; SEMICONDUCTOR MATERIALS; WAVE FUNCTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIFFERENTIAL EQUATIONS; EQUATIONS; FUNCTIONS; GALLIUM COMPOUNDS; MATERIALS; PARTIAL DIFFERENTIAL EQUATIONS; PNICTIDES; WAVE EQUATIONS