Electronic and geometric investigations of the Ca/Si(1 1 1)-(5x2) surface
Creators
- 1. School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom)
Description
The atomic and electronic structures of the Ca/Si(1 1 1)-(5x2) surface have been theoretically investigated by using the pseudopotential method and the local density approximation (LDA) of the density functional theory. The geometrical model is based on the deposition of three Ca lines on the top of a combination of a honeycomb chain channel (HCC) and the Seiwatz (SZ) chain formed by Si-adatoms. The Ca adatoms lie on both H3 and T4 symmetry sites. This structural model produces a semiconducting surface band structure with a clear LDA energy gap of 0.56 eV. Ca-derived band gap states have been identified by comparing the band structures for the clean Si(1 1 1)-(5x2) and Ca/Si(1 1 1)-(5x2) surfaces. Significant charge transfer from the Ca adatoms to neighbouring Si atoms has been concluded by analysing electronic charge density and STM simulations. A discussion of the role of Ca adatoms in improving the chemical passivation of the Si(1 1 1) surface has been attempted by examining the orbital nature of states in the fundamental band gap of bulk Si
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.03.052Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.03.052;
- PII
- S0169-4332(08)00509-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 24
- Journal Page Range
- p. 8083-8088
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 5. international workshop on semiconductor surface passivation
- Acronym
- SSP'2007
- Dates
- 16-19 Sep 2007
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40032217
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; DEPOSITION; ELECTRONIC STRUCTURE; ENERGY GAP; MILLI EV RANGE; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SIMULATION; STRUCTURAL MODELS; SURFACES
- Descriptors DEC
- CALCULATION METHODS; ENERGY RANGE; MICROSCOPY; SORPTION; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.