Published October 15, 2008 | Version v1
Journal article

Electronic and geometric investigations of the Ca/Si(1 1 1)-(5x2) surface

  • 1. School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL (United Kingdom)

Description

The atomic and electronic structures of the Ca/Si(1 1 1)-(5x2) surface have been theoretically investigated by using the pseudopotential method and the local density approximation (LDA) of the density functional theory. The geometrical model is based on the deposition of three Ca lines on the top of a combination of a honeycomb chain channel (HCC) and the Seiwatz (SZ) chain formed by Si-adatoms. The Ca adatoms lie on both H3 and T4 symmetry sites. This structural model produces a semiconducting surface band structure with a clear LDA energy gap of 0.56 eV. Ca-derived band gap states have been identified by comparing the band structures for the clean Si(1 1 1)-(5x2) and Ca/Si(1 1 1)-(5x2) surfaces. Significant charge transfer from the Ca adatoms to neighbouring Si atoms has been concluded by analysing electronic charge density and STM simulations. A discussion of the role of Ca adatoms in improving the chemical passivation of the Si(1 1 1) surface has been attempted by examining the orbital nature of states in the fundamental band gap of bulk Si

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2008.03.052

Additional details

Identifiers

DOI
10.1016/j.apsusc.2008.03.052;
PII
S0169-4332(08)00509-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
254
Journal Issue
24
Journal Page Range
p. 8083-8088
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
5. international workshop on semiconductor surface passivation
Acronym
SSP'2007
Dates
16-19 Sep 2007
Place
Zakopane (Poland)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40032217
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ADSORPTION; CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; DEPOSITION; ELECTRONIC STRUCTURE; ENERGY GAP; MILLI EV RANGE; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SIMULATION; STRUCTURAL MODELS; SURFACES
Descriptors DEC
CALCULATION METHODS; ENERGY RANGE; MICROSCOPY; SORPTION; VARIATIONAL METHODS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.