Published April 2009
| Version v1
Journal article
Excitonic absorption of the light in heterojunctions Bi2O3-InSe
Creators
- 1. Moldova State University, 60, A. Mateevici str., MD-2009, Chisinau (Moldova, Republic of)
Description
The interface layer of the Bi2O3/InSe:Cd (0.10 at.%) heterojunction was investigated using optical and electro reflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K. (authors)
Availability note (English)
Available online at http://sfm.asm.md/moldphys/Additional details
Identifiers
Publishing Information
- Journal Title
- Moldavian Journal of the Physical Sciences
- Journal Volume
- 8
- Journal Issue
- 2
- Journal Page Range
- p. 163-168
- ISSN
- 1810-648X
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 42057932
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; BISMUTH COMPOUNDS; BRIDGMAN METHOD; CADMIUM COMPOUNDS; CRYSTAL GROWTH METHODS; EVAPORATION; EXCITONS; HETEROJUNCTIONS; INDIUM COMPOUNDS; INDIUM OXIDES; INDIUM SELENIDES; MONOCRYSTALS; OXYGEN COMPOUNDS; REFRACTION; SELENIUM COMPOUNDS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; VACUUM EVAPORATION; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; EVAPORATION; INDIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; QUASI PARTICLES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- 22 refs., 3 figs.