Published December 2003
| Version v1
Journal article
Hanle effect in heterogenetic-doped GaAs
- 1. RAN, Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe, Sankt-Peterburg (Russian Federation)
Description
The distribution of the spin density in the GaAs/AlGaAs heterostructure is studied under stationary conditions of the optical orientation. The detailed analysis of the dynamics and relaxation processes, responsible for the steady-state spatial nonuniformity of the spin orientation, is presented. The concentrations of the acceptor admixture in different areas of the nonuniformly alloyed gallium arsenides were determined by the spin relaxation times, measured through the optical orientation method
Abstract (Russian)
В стационарных условиях оптической ориентации исследовано распределение спиновой плотности в гетероструктуре GaAs/AlGaAs. Дан подробный анализ динамики и релаксационных процессов, ответственных за установившуюся пространственную неоднородность спиновой оринтации. Определены концентрации акцепторной примеси в разных областях неоднородно легированного арсенида галлия. Концентрации определялись по временам спиновой релаксации, измеренным методом оптической ориентацииAdditional details
Additional titles
- Original title (Russian)
- Эффект Ханле в неоднородно легированном GaAs
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 45
- Journal Issue
- 12
- Journal Page Range
- p. 2153-2160
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37080729
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRONIC STRUCTURE; FLOWSHEETS; GALLIUM ARSENIDES; HETEROJUNCTIONS; MAGNETIC FIELDS; PHOTOLUMINESCENCE; RELAXATION TIME; SPIN ORIENTATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIAGRAMS; EMISSION; GALLIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; ORIENTATION; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- 25 refs., 7 figs., 1 tab.