Preparation parameters and characterization of vanadium based Josephson junctions

Reliable vanadium based Josephson junctions are realized employing both native oxide and CdS as barrier layers. The preparation parameters adopted in the realization of vanadium films are discussed in connection with those used by other authors in the context of superconductive tunneling. Experimental results on the two types of structures, V-Vsub(X)Osub(Y)-Pb and V-CdS-In, are reported. Data concerning the former type of junction show among other things, a low excess current below the gap voltage. As far as CdS barrier junctions is concerned, very promising results are accomplished for both electro-optical behavior and lifetime performances. (orig.)