Published November 2015 | Version v1
Journal article

Building topological devices through emerging robust helical surface states

  • 1. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China)
  • 2. Department of Physics, Hebei Normal University, Hebei 050024 (China)
  • 3. Department of Physics, Soochow University, Suzhou 215006 (China)

Description

We propose a nonlocal manipulation method to build topological devices through emerging robust helical surface states in Z2 = 0 topological systems. Specifically, in a ribbon of Z2 = 0 Bernevig-Hughes-Zhang (BHZ) model with finite-size effect, if magnetic impurities are doped on the top (bottom) edge, the edge states on the bottom (top) edge can be altered according to the strengths and directions of these magnetic impurities. Consequently, the backscattering between the emerging robust helical edge states and gapped normal edge states due to finite-size confinement is also changed, which makes the system alternate between a good one-channel conductor and a good insulator. This effect allows for fabricating topological devices with a high on-off ratio. Furthermore, this proposal can be generalized to three-dimensional (3D) models and more realistic Cd3As2 type Dirac semimetals. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1367-2630/17/11/113040

Additional details

Publishing Information

Journal Title
New Journal of Physics
Journal Volume
17
Journal Issue
11
Journal Page Range
[10 p.]
ISSN
1367-2630

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47120455
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
BACKSCATTERING; CADMIUM ARSENIDES; CONFINEMENT; DOPED MATERIALS; IMPURITIES; SEMIMETALS; THREE-DIMENSIONAL CALCULATIONS; TOPOLOGY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; ELEMENTS; MATERIALS; MATHEMATICS; PNICTIDES; SCATTERING