Structural perfection of silicon layers formed under pulsed laser postimplantation annealing

Structure dependence of recrystallized silicon layers preliminarily irradiated with 60 keV P+ ions at 5x1015 cm-2 dose on laser beam energy density during annealing was investigated. Structure stability of layers, which were annealed at energy density changed from 0.3 to 8 J/cm2, was investigated. It is established that at fusion depths < 1.5 Rp (Rp is mean path of implanted ions) a layer rendered amorphous during the implantation is recrystallized to a polycrystal. At fusion depths (1.5-3)Rp monocrystalline layers, containing tetrahedrons of stacking faults, are formed. Imperfections from a layer of considerable structural disturbances are investigated at low energy densities due to overheating of annealed layers considerable thermal stresses appear, which relaxation results in the dislocation formation