Published July 20, 2009 | Version v1
Journal article Metadata-only

Lattice polarity detection of InN by circular photogalvanic effect

Creators

  • 1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
  • 2. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)
  • 3. Department of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

Description

We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

Additional details

Identifiers

DOI
10.1063/1.3186042;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
95
Journal Issue
3
Journal Page Range
p. 031902-031902.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41040254
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
HELICITY; INDIUM NITRIDES; LAYERS; NONDESTRUCTIVE TESTING; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; SPIN; THIN FILMS; VISIBLE RADIATION
Descriptors DEC
ANGULAR MOMENTUM; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; INDIUM COMPOUNDS; MATERIALS; MATERIALS TESTING; NITRIDES; NITROGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; TESTING

Optional Information

Notes
(c) 2009 American Institute of Physics