Published December 1990
| Version v1
Journal article
High-frequency annealing effects on ionizing radiation response of MOSFET
- 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
- 2. Hitachi Ltd., Ibaraki (Japan). Energy Research Lab.
- 3. Space Systems Div., Hitachi, Ltd., Yokohama, Kanagawa (Japan)
Description
The effects of high-frequency ac bias on the ionizing radiation response of MOSFETs were studied. Radiation-induced interface traps were annealed out during irradiation and post-irradiation annealing when an ac bias was applied with a zero offset-voltage. In addition, the recovery of 40 MHz biases devices agreed with that of 860 MHz biased ones for the same total number of alternating cycles of ac gate bias voltage. It is concluded that an alternating transition between inversion and accumulation caused by high-frequency ac bias is responsible and the total number of transition cycles may be relevant for the annealing of radiation-induced interface traps
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 37
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1670-1676
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 27. IEEE annual conference on nuclear and space radiation effects.
- Dates
- 16-20 Jul 1990.
- Place
- Reno, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22056383
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; FREQUENCY DEPENDENCE; INTERFACES; MHZ RANGE 01-100; MHZ RANGE 100-1000; MOSFET; PHYSICAL RADIATION EFFECTS; TRAPPING
- Descriptors DEC
- FIELD EFFECT TRANSISTORS; FREQUENCY RANGE; HEAT TREATMENTS; MHZ RANGE; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-900723--.