Published February 17, 2000 | Version v1
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Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits

Creators

Description

Thermal-stress effects are shown to have a significant impact on the enhanced low-dose-rate sensitivity of linear bipolar circuits. Implications of these results on hardness assurance testing and mechanisms are discussed

Availability note (English)

Available from INIS in electronic form; Also available from OSTI as DE00751354; PURL: https://www.osti.gov/servlets/purl/751354-Oi6TRD/webviewable/

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Additional details

Identifiers

URL
https://www.osti.gov/servlets/purl/751354-Oi6TRD/webviewable/;

Publishing Information

Imprint Pagination
7 p.
Report number
SAND--2000-0456C

Conference

Title
2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Dates
24-28 Jul 2000
Place
Reno, NV (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
31049963
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SENSITIVITY; TESTING; THERMAL STRESSES
Descriptors DEC
DOSES; ELECTRONIC CIRCUITS; RADIATION EFFECTS; STRESSES

Optional Information

Contract/Grant/Project number
AC04-94AL85000
Funding organization
US Department of Energy (United States)