Published October 31, 2013 | Version v1
Journal article

Microstructure and properties of epitaxial La0.7Sr0.3MnO3/BaTiO3 bilayer film grown by pulsed laser deposition

  • 1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
  • 2. College of Physics and Electronic Engineering, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007 (China)
  • 3. Department of Nuclear Materials Science and Engineering, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

Description

La0.7Sr0.3MnO3/BaTiO3 bilayer films were grown on SrTiO3 (001) substrates buffered with SrRuO3 films as the bottom electrodes by pulsed laser deposition. The quality of the La0.7Sr0.3MnO3/BaTiO3/SrRuO3/SrTiO3 films was analyzed by means of transmission electron microscopy and atomic force microscopy. It is found that each layer grows epitaxially on its bottom layer. La0.7Sr0.3MnO3/BaTiO3 bilayer films exhibit typical ferroelectric hysteresis loops for BaTiO3 films with the remnant polarization of 16.2 μC/cm2 at driven field of 278 kV/cm and ferromagnetic hysteresis loops for La0.7Sr0.3MnO3 film with the coercive field of about 4 kA/m and the saturation magnetization of 205 kA/m at 295 K. The effect of ferroelectric BaTiO3 layer poling on the resistivity of ferromagnetic La0.7Sr0.3MnO3 layer was also investigated. - Highlights: • La0.7Sr0.3MnO3/BaTiO3/SrRuO3 films were epitaxially grown on (001) SrTiO3. • Multilayer films show typical ferroelectric and ferromagnetic properties. • La0.7Sr0.3MnO3 resistivity is affected by poling BaTiO3 layer

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.08.050

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.08.050;
PII
S0040-6090(13)01349-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
545
Journal Page Range
p. 241-244
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.