Magnetic properties of wide gap layered semiconductor (La1-xMxo)Cu1-yTyS (M=Ca, Ce; T=Mn, Co, Zn)

We have investigated on carrier and magnetic moment injections into a wide gap layered semiconductor (LaO)CuS with alternating LaO and CuS layers. By the substitution of 3d transition metal or Zn ions for Cu sites and of rare earth metal or Ca ions for La sites, electrical and magnetic properties of the compound can be changed. For the Ca or Ce substitution, the decrease of the electrical resistivity is shown accompanied by the small localized magnetic moments for the latter. The localized magnetic moments and the electrical resistivity enhancement due to compensation of the existing acceptor levels are observed for the simultaneous substitution of Ca and Co and that of Ca and Mn