Characterization of silicon nitride films deposited from dichlorosilane and ammonia

Thin silicon nitride films on silicon substrates, obtained from dichlorosilane and ammonia, are characterized by structure, composition, physical, optical, chemical and electrical properties. Properties are dependent, to a large extent, on the deposition conditions and are generally similar to those of the films deposited by the ammonolysis of silicon tetrachloride and the nitridation of silane with ammonia. Silicon nitride obtained from dichlorosilane has attractive properties to use for device passivation. (author)