Published June 1970 | Version v1
Journal article

Change of carrier diffusion length in damaged silicon solar cells

  • 1. Nagoya Inst. of Tech. (Japan)

Description

no abstract available

Additional details

Publishing Information

Journal Title
Denshi Tsushin Gakkai Ronbunshi, C
Journal Volume
53-C
Journal Issue
6
Series
Denshi Tsushin Gakkai Ronbunshi, C.
Journal Page Range
363-369

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
1003560
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Progress Report