Published May 15, 1985
| Version v1
Journal article
Influence of dangling-bond defects on recombination in a-Si:H
Creators
- 1. Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
Description
Time-resolved photoinduced absorption (PIA) and steady-state photoconductivity (PC) experiments are used to study recombination processes in electron-irradiated hydrogenated amorphous silicon (a-Si:H). Defect densities measured by ESR range from 5 x 1015/cm3 to 1018/cm3. It is found that while increasing the dangling-bond density reduces the PC, the PIA decay rate increases. The results are discussed in the context of a recombination model where the defect density determines whether the carriers recombine through a fast bimolecular or a slower monomolecular process
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 31
- Journal Issue
- 10
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 6913-6916
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16077304
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATTENUATION; CHARGE CARRIERS; CHEMICAL BONDS; ELECTRON SPIN RESONANCE; ELECTRONS; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SILANES
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HYDRIDES; HYDROGEN COMPOUNDS; LEPTONS; MAGNETIC RESONANCE; PHYSICAL PROPERTIES; RADIATION EFFECTS; RESONANCE; SILICON COMPOUNDS