The structure of rod defects in boron-implanted silicon

A transmission electron microscopy study of defects in boron-implanted silicon has demonstrated the existence of interstitial type defects, having a Burgers vector of 1/6<411> and containing an intrinsic stacking fault. The defects have a rod-like shape and are elongated in the <110> direction which is perpendicular to the Burgers vector. This elongation is shown to be consistent with preferential growth arising from the different dissociation reactions undergone by the dislocation segments enclosing the loop. The generation mechanism of these defects is discussed. (author)