Published January 2006 | Version v1
Journal article

Film synthesis of MgB2 by ion ablation of high-energy pulsed power

  • 1. Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003 (Japan)
  • 2. Sandia National Laboratories, Albuquerque, NM 87185 (United States)

Description

MgB2 thin films were deposited by the ablation technique utilizing high-energy pulsed ion beam of 700 keV and 10 J/cm2 pulse. The target plates are fabricated by sintering MgB2 stoichiometric powder at 1100 oC being encapsulated. The MgB2 films are preferentially c-axis oriented on r-cut Al2O3 substrates, in spite of the high quenching rate. A possible growth of MgB2 single crystals with hexagonal shape and 1 μm in size is observed on the film surface. Upon conducting post-annealing at 600 oC, the films become superconducting with the transition temperature T c = 11 K

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.08.092;
PII
S0168-583X(05)01547-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
242
Journal Issue
1-2
Journal Page Range
p. 360-362
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on ion beam modification of materials
Dates
5-10 Sep 2004
Place
Pacific Grove, CA (United States)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.