Published September 19, 2005 | Version v1
Journal article

Chemical fluctuation-induced nanodomains in Cu(In,Ga)Se2 films

  • 1. HelioVolt Corporation, Austin, Texas 78746 (United States)
  • 2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Description

The microstructure and chemistry of CuInSe2 single-crystals and Cu(In,Ga)Se2 thin films from high-efficiency devices are investigated by transmission electron microscopy and x-ray energy-dispersive spectroscopy. We find strong chemical fluctuations at the nanoscale, which result in a lattice comprising a mixture of relatively Cu-poor and Cu-rich nanodomains in both cases. These nanodomains are crystallographically coherent, and no structural lattice defects are found at the interfaces between them. These nanodomains may interconnect, forming three-dimensional, interpenetrating Cu-poor and Cu-rich percolation networks. Such interconnected structures may play a role in the high device performance of Cu(In,Ga)Se2 thin-film photovoltaics

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
87
Journal Issue
12
Journal Page Range
p. 121904-121904.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2005 American Institute of Physics