Published 1986 | Version v1
Journal article

Photoluminescence spectroscopy of photon implantation induced defects in CdTe and ZnTe

  • 1. Centre National de la Recherche Scientifique (CNRS), 92 - Meudon-Bellevue (France). Lab. de Magnetisme et de Physique du Solide

Description

Photoluminescence spectra of CdTe and ZnTe implanted with 150 keV protons show that acceptor bound excitons have disappeared or are strongly attenuated and that a new exciton-like luminescence line rises at about 20 meV below the free exciton transition. This line is also seen in CdTe after 50 keV helium implantation. In addition a deep luminescence band at 0-8 eV is detected in CdTe. These results are interpreted as first the neutralization of acceptor impurities by atomic hydrogen and second the generation of double acceptor defects which could be cation vacancies in a stabilized form. (author) 5 figs., 12 refs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
10-12
Journal Issue
pt.3
Series
Mater. Sci. Forum.
Journal Page Range
857-862
ISSN
0255-5476
CODEN
MSFOE