Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization
Creators
- 1. School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States)
- 2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906 (United States)
- 3. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906 (United States)
- 4. Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 (China)
Description
There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.
Additional details
Identifiers
- DOI
- 10.1063/1.4894861;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 11
- Journal Page Range
- p. 111909-111909.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46009681
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIER LIFETIME; CARRIER MOBILITY; CHARGE CARRIERS; CHARGE COLLECTION; COPPER COMPOUNDS; CRYSTALLIZATION; DEFECTS; DEPOSITION; EFFICIENCY; ILLUMINANCE; INDIUM COMPOUNDS; LASER RADIATION; NANOPARTICLES; NANOSTRUCTURES; PHOTOVOLTAIC EFFECT; POWER DENSITY; SCATTERING; SELENIDES; THIN FILMS; TRAPPING
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; FILMS; LIFETIME; MOBILITY; PARTICLES; PHASE TRANSFORMATIONS; PHOTOELECTRIC EFFECT; RADIATIONS; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC