Published November 2019 | Version v1
Journal article Metadata-only

Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

Creators

  • 1. Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar (Senegal)
  • 2. University Institute of Technology, University of Thies (Senegal)
  • 3. Ecole Polytechnique de Thies (Senegal)

Description

The minority carrier's recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base. (Authors)

Availability note (English)

Available online: https://doi.org/10.4236/jmp.2019.1013105

Additional details

Identifiers

URL
https://www.scirp.org/journal/jmp;
DOI
10.4236/jmp.2019.1013105;

Publishing Information

Journal Title
Journal of Modern Physics (Online)
Journal Volume
10
Journal Issue
13
Journal Page Range
p. 1596-1605
ISSN
2153-120X

INIS

Country of Publication
United States
Country of Input or Organization
Senegal
INIS RN
50083000
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CALIBRATION; DIAGRAMS; MAGNETIC FIELDS; SENEGAL; SOLAR CELLS; SOLAR ENERGY; THICKNESS; VELOCITY
Descriptors DEC
AFRICA; DEVELOPING COUNTRIES; DIMENSIONS; DIRECT ENERGY CONVERTERS; ENERGY; ENERGY SOURCES; EQUIPMENT; INFORMATION; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RENEWABLE ENERGY SOURCES; SOLAR EQUIPMENT

Optional Information

Notes
5 figs. ; 1 tab. ; 37 refs. ; Copyright © 2019 by author(s) and Scientific Research Publishing Inc.