Published November 15, 2014 | Version v1
Journal article

Photoluminescence efficiency in AlGaN quantum wells

  • 1. Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania)
  • 2. Department of ECE and CIE, Rensselaer Polytechnic Institute (United States)
  • 3. Sensor Electronic Technology, Inc. (United States)

Description

Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2013.12.019

Additional details

Identifiers

DOI
10.1016/j.physb.2013.12.019;
PII
S0921-4526(13)00800-4;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
453
Journal Page Range
p. 40-42
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international material research congress
Acronym
IMRC 2013
Dates
11-15 Aug 2013
Place
Cancun Quintana Roo (Mexico)

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.