Investigation on upconversion photoluminescence of Bi3TiNbO9:Er3+:Yb3+ thin films
- 1. Center for Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology, Harbin 150001 (China)
- 2. Center for Composite Materials, Harbin Institute of Technology, Harbin 150001 (China)
- 3. Materials Research Institute, Pennsylvania State University, University Park, PA 16802 (United States)
Description
Bi3TiNbO9:Er3+:Yb3+ (BTNEY) thin films were fabricated on fused silica by pulsed laser deposition. It was demonstrated that different laser fluence and substrate temperature during growth of BTNEY upconversion photoluminescence (UC-PL) samples control the film's grain size and hence influences the UC-PL properties. The average grain size of BTNEY thin films deposited on fused silica substrates with laser fluence 4, 5, 6, and 7 J/cm2 are 30.8, 35.9, 40.6, and 43.4 nm, respectively. The 525 nm emission intensities increase with the deposition laser fluence and the emission intensities of BTNEY thin film deposited under 700 and 600 deg. C are almost 24 and 4 times, respectively, as strong as those of samples under 500 oC. The grain size of BTNEY thin film increases with the increasing temperature. UC-PL of BTNEY films is enhanced by increasing grain size of the films. - Highlights: → UC-PL intensities of BTNEY films increase with the deposition laser fluence. → UC-PL intensities of BTNEY films increase with the substrate temperature. → Grain size of thin films can be manipulated during the thin films deposition. → UC-PL of thin films can be manipulated.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2011.06.045Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2011.06.045;
- PII
- S0022-2313(11)00393-0;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 131
- Journal Issue
- 12
- Journal Page Range
- p. 2574-2578
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43050058
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONTROL; ENERGY BEAM DEPOSITION; ERBIUM IONS; GRAIN SIZE; LASER RADIATION; LASERS; PHOTOLUMINESCENCE; PULSED IRRADIATION; RARE EARTHS; SILICA; SUBSTRATES; THIN FILMS; YTTERBIUM IONS
- Descriptors DEC
- CHARGED PARTICLES; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FILMS; IONS; IRRADIATION; LUMINESCENCE; METALS; MICROSTRUCTURE; MINERALS; OXIDE MINERALS; PHOTON EMISSION; RADIATIONS; SIZE; SURFACE COATING
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.