Published January 18, 1979 | Version v1
Journal article Metadata-only

Electron-beam annealing of ion-implanted silicon

Creators

  • 1. Cambridge Univ. (UK). Dept. of Engineering

Description

A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure. (author)

Additional details

Publishing Information

Journal Title
Electron. Lett.
Journal Volume
15
Journal Issue
2
Series
Electron. Lett.
Journal Page Range
45-47
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
10469439
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ARSENIC IONS; BORON IONS; DOSE-RESPONSE RELATIONSHIPS; ELECTRON BEAMS; ELECTRON SCANNING; ION IMPLANTATION; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
ATOMIC IONS; BEAMS; CHARGED PARTICLES; ELEMENTS; HEAT TREATMENTS; IONS; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS